The strategic partnership is expected to fast track RIR’s go to market strategy by introducing Silicon Carbide (SiC) devices in different voltages and amps, thereby reducing the risk and achieve scalability for high-efficiency power solutions from its proposed SiC plant in Odisha India.
June 05, 2025 – RIR Power Electronics Ltd., a global pioneer in high-power semiconductor solutions, proudly announces the successful production expansion and shipment of 1200V Silicon Carbide diodes from Taiwan. This milestone was achieved through a strategic collaboration with a contract fab at Pro Asia Semiconductor Corporation (PASC), Taiwan and by leveraging technology IP RIR Power acquired from Sicamore Semi, USA. The product portfolio includes 1200V Schottky Barrier Diodes (SBDs) ranging from 2 amps to 60 amps, addressing the most common ratings used across multiple applications and markets globally. Besides serving existing customers in India and the USA, shipping from Taiwan also provides improved access to strategic high-growth markets for Silicon Carbide devices in China, Japan and Korea.
RIR Power’s SiC technology and portfolio are the result of a comprehensive technology transfer agreement signed with Sicamore Semi on October 17, 2024. The agreement granted RIR Power exclusive rights to manufacture, market and commercialize SiC diodes, Metal Oxide Silicon Field Effect Transistors (MOSFETs) and Insulated Gated Bipolar Transistors (IGBTs) using Sicamore’s proven IP and process knowhow. Originally developed for 4-inch wafers, the technology has been successfully adapted for 6-inch wafer production. The scale-up was achieved with technical support from Vortex Semi, USA and PASC.
The 1200V SiC diodes, produced at PASC’s state-of-the-art fabrication facility in Taiwan, have been shipped to India and validated to meet global industry standards. RIR Power has already secured purchase orders from Richardson Electronics (USA) and Ankit Plastics (India), both key suppliers to the commercial, industrial and defence sectors.
“This achievement marks a significant leap for RIR’s power electronics manufacturing capabilities and de-risk the technological unknown for shipping out a SiC device on a 6-Inch wafer from RIR Odisha Fab upon commencement of production,” said Dr. Harshad Mehta, Chairman & Director, RIR Power Electronics Ltd. “By successfully transferring and scaling up world-class SiC technology, RIR Power is positioned to serve global high-growth markets including automotive, industrial, renewable energy, and defence, while strengthening the domestic semiconductor ecosystem.”
This achievement aligns with India’s Make in India initiative, reinforcing the nation’s semiconductor supply chain and reducing reliance on imports for critical defence technologies. RIR Power’s new SiC semiconductor facility in Odisha, with a strategic investment of ₹618 crore, is set to further enhance India’s indigenous manufacturing capabilities, generate employment, and support the country’s ambition to emerge as a global leader in advanced commercial, industrial and defence electronics.
